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    Semiconductor device cleaning method and apparatus
    1.
    发明授权
    Semiconductor device cleaning method and apparatus 有权
    半导体器件清洗方法及装置

    公开(公告)号：US09299593B2

    公开(公告)日：2016-03-29

    申请号：US13210998

    申请日：2011-08-16

    Applicant: Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/00 ,  H01L21/67 ,  B08B3/02

    CPC classification number: H01L21/67051 ,  B08B3/024

    Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

    Abstract translation: 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。

    In-situ backside cleaning of semiconductor substrate
    3.
    发明授权
    In-situ backside cleaning of semiconductor substrate 有权
    半导体衬底的原位背面清洗

    公开(公告)号：US08657963B2

    公开(公告)日：2014-02-25

    申请号：US13240583

    申请日：2011-09-22

    Applicant: Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: B08B1/00

    CPC classification number: H01L21/67046 ,  H01L21/67051

    Abstract: The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.

    Abstract translation: 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并且将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。

    IN-SITU BACKSIDE CLEANING OF SEMICONDUCTOR SUBSTRATE
    5.
    发明申请
    IN-SITU BACKSIDE CLEANING OF SEMICONDUCTOR SUBSTRATE 有权
    半导体基板的背面清洁

    公开(公告)号：US20130074872A1

    公开(公告)日：2013-03-28

    申请号：US13240583

    申请日：2011-09-22

    Applicant: Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: B08B3/08 ,  B08B1/00 ,  B08B7/04 ,  B08B3/02

    CPC classification number: H01L21/67046 ,  H01L21/67051

    Abstract: The present disclosure provides a method and apparatus for cleaning a semiconductor wafer. In an embodiment of the method, a single wafer cleaning apparatus is provided and a wafer is positioned in the apparatus. A first chemical spray is dispensed onto a front surface of the wafer. A back surface of the wafer is cleaned while dispensing the first chemical spray. The cleaning of the back surface may include a brush and spray of cleaning fluids. An apparatus operable to clean the front surface and the back surface of a single semiconductor wafer is also described.

    Abstract translation: 本公开提供了一种用于清洁半导体晶片的方法和装置。 在该方法的一个实施例中，提供单个晶片清洁装置，并将晶片定位在装置中。 将第一化学喷雾分配到晶片的前表面上。 在分配第一化学喷雾的同时清洁晶片的背面。 后表面的清洁可以包括刷子和喷射清洁流体。 还描述了可操作以清洁单个半导体晶片的前表面和后表面的装置。

    HAIR DYE CONTAINING ONE OR MORE EDIBLE OR COSMETIC COLORS
    6.
    发明申请
    HAIR DYE CONTAINING ONE OR MORE EDIBLE OR COSMETIC COLORS 审中-公开
    包含一种或多种可食用或化妆品颜色的头发眼镜

    公开(公告)号：US20120141398A1

    公开(公告)日：2012-06-07

    申请号：US13218443

    申请日：2011-08-25

    Applicant: KUO SHENG CHUANG

    Inventor： KUO SHENG CHUANG

    IPC: A61K8/97 ,  A61Q5/06 ,  A61Q5/04 ,  A61K8/44 ,  A61K8/46 ,  A61Q1/04 ,  A61K8/34 ,  A61K8/36 ,  A61K8/42 ,  A61K8/368 ,  A61K8/49 ,  A61Q1/02 ,  A61Q5/10 ,  A61K8/22

    CPC classification number: A61K8/22 ,  A61K8/38 ,  A61K8/44 ,  A61K8/46 ,  A61Q3/00 ,  A61Q5/06 ,  A61Q5/065 ,  A61Q5/10 ,  A61Q19/04

    Abstract: This invention discloses a hair dye and a hair dyeing method using a dye mainly made of natural colors (used in food and cosmetics), synthetic colors (used in food and cosmetics), and cosmetic colors. The hair dye can be applied for dyeing hair and skin at the same time according to the keratin-like structure of the hair and skin. The hair dye can be manufactured in a form of a hair dye cream, a hair dye lotion, a frost hair dye, a hair dye gel, a hair dye ointment, a hair dye shampoo, a foam type hair dye, or a spray type hair dye. After the hair dye is combined with a perm agent, a dyeing and perming product is produced for dyeing and perming hair all at one time. The natural colors (used in food and cosmetics), synthetic colors (used in food and cosmetics) and cosmetic colors of the hair dye penetrate into the hair by different hair dyeing methods to achieve the hair dyeing effect, and permanent hair dye, semi-permanent hair dye and temporary hair dye are manufactured according to the depth that the color enters into the hair structure.

    Abstract translation: 本发明公开了使用主要由天然色素（用于食品和化妆品）的染料，合成颜色（食品和化妆品中使用的）和化妆品颜色的染发剂和染发方法。 染发剂可以根据头发和皮肤的角蛋白样结构同时用于染发头发和皮肤。 染发剂可以以染发乳液，染发乳液，霜染发剂，染发剂凝胶，染发膏，染发剂洗发剂，泡沫型染发剂或喷雾剂的形式制造 染发剂 在染发剂与烫发剂组合之后，产生染色和烫发产品，以一次染色和烫发头发。 染发剂的自然色（用于食品和化妆品），合成颜色（用于食品和化妆品）和化妆品颜色通过不同的染发方法渗透到头发中以实现染发效果，并且使用永久性染发剂， 根据颜色进入头发结构的深度制造永久性染发剂和临时染发剂。

    Flavone derivatives as TNFalpha inhibitors or antagonists
    7.
    发明申请
    Flavone derivatives as TNFalpha inhibitors or antagonists 审中-公开
    黄酮衍生物作为TNFα抑制剂或拮抗剂

    公开(公告)号：US20060105967A1

    公开(公告)日：2006-05-18

    申请号：US10992178

    申请日：2004-11-18

    Applicant: Li-Wei Hsu ,  Su-Chen Chang ,  Chen-Hsiang Shen ,  Yuan-Xiu Liao ,  Kuo-Sheng Chuang

    Inventor： Li-Wei Hsu ,  Su-Chen Chang ,  Chen-Hsiang Shen ,  Yuan-Xiu Liao ,  Kuo-Sheng Chuang

    IPC: A61K31/7048 ,  A61K31/353

    CPC classification number: A61K31/353 ,  A61K31/7048

    Abstract: The use of flavone derivatives of formula (I) in which R1, R2, R3, R4 and R5 independently represent hydrogen, hydroxy or an ester group; R6 represents hydrogen, hydroxy, an ester group or an O-glycoside group such as O-rhamnose, O-glucoside, O-retinoside or O-xyloside; and represents a single bond or a double bond; or the pharmaceutically acceptable salts thereof as TNFα antagonists or inhibitors.

    Abstract translation: 使用式（I）的黄酮衍生物，其中R 1，R 2，R 3，R 4， >和R 5独立地表示氢，羟基或酯基; R 6表示氢，羟基，酯基或O-糖苷基，例如O-鼠李糖，O-葡萄糖苷，O-鲸蜡酮或O-木糖苷; “img id =”custom-character-00001“he =”2.79mm“wi =”6.35mm“file =”US20060105967A1-20060518-P00900.TIF“alt =”custom character“img-content =”character“img- format =“tif”/>表示单键或双键; 或其药学上可接受的盐作为TNFα拮抗剂或抑制剂。

    SEMICONDUCTOR DEVICE CLEANING METHOD AND APPARATUS
    8.
    发明申请
    SEMICONDUCTOR DEVICE CLEANING METHOD AND APPARATUS 有权
    半导体器件清洗方法和装置

    公开(公告)号：US20130045606A1

    公开(公告)日：2013-02-21

    申请号：US13210998

    申请日：2011-08-16

    Applicant: Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    Inventor： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chin-Hsiang Lin

    IPC: H01L21/306 ,  B08B3/08 ,  B08B3/02

    CPC classification number: H01L21/67051 ,  B08B3/024

    Abstract: A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.

    Abstract translation: 一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。 将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。 此后，晶片旋转。 从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。 在实施例中，多个喷杆位于晶片上方。 喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。

    Method of forming undoped/in-situ doped/undoped polysilicon sandwich for floating gate application
    9.
    发明授权
    Method of forming undoped/in-situ doped/undoped polysilicon sandwich for floating gate application 失效
    用于浮栅应用的无掺杂/原位掺杂/未掺杂多晶硅夹层的形成方法

    公开(公告)号：US5840607A

    公开(公告)日：1998-11-24

    申请号：US729996

    申请日：1996-10-11

    Applicant: Jun-Ker Yeh ,  Long-Sheng Yeou ,  Kuo-Sheng Chuang ,  Siu-Han Liao

    Inventor： Jun-Ker Yeh ,  Long-Sheng Yeou ,  Kuo-Sheng Chuang ,  Siu-Han Liao

    IPC: H01L21/336 ,  H01L29/423 ,  H01L29/51

    CPC classification number: H01L29/66825 ,  H01L29/42324 ,  H01L29/511

    Abstract: The present invention provides a method for forming a transistor having a stacked gate electrode structure with two gates; a lower floating gate and an upper control gate. The floating gate is formed of three polysilicon layers--undoped/doped/undoped polysilicon layers. A substrate is provided having a tunnel oxide layer 20. Then sequentially a first undoped, first doped, and second undoped polysilicon layers 22,24,26 are formed over the tunnel oxide layer thereby forming a lower floating gate layer 22, 24, 26. An intergate dielectric layer 28,30,32 is then formed over the second undoped polysilicon layer 26. Next, an upper control gate 36 and a cap oxide layer are formed over the intergate dielectric layer 28,30,32. The stacked two gate electrode structure is formed by patterning the above mentioned layers. Then spaced source and drain regions 44 are formed on opposite sides of the stacked gate structure thereby completing the transistor.

    Abstract translation: 本发明提供了一种用于形成具有两个栅极的堆叠栅电极结构的晶体管的方法; 下部浮动栅极和上部控制栅极。 浮置栅极由三个多晶硅层 - 未掺杂/掺杂/未掺杂的多晶硅层形成。 提供具有隧道氧化物层20的衬底。然后依次在隧道氧化物层上形成第一未掺杂的，第一掺杂的和第二未掺杂的多晶硅层22,24,26，从而形成下浮动栅层22,24,26。 然后在第二未掺杂多晶硅层26上形成隔间电介质层28,30,32。接下来，在栅间电介质层28,30,32上方形成上控制栅极36和盖氧化物层。 层叠的两个栅电极结构通过图案化上述层而形成。 然后在层叠的栅极结构的相对侧上形成间隔的源极和漏极区域44，从而完成晶体管。

    CHEMICAL DISPERSION METHOD AND DEVICE
    10.
    发明申请
    CHEMICAL DISPERSION METHOD AND DEVICE 审中-公开
    化学分散方法和装置

    公开(公告)号：US20130034966A1

    公开(公告)日：2013-02-07

    申请号：US13198420

    申请日：2011-08-04

    Applicant: Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

    Inventor： Ming-Hsi Yeh ,  Kuo-Sheng Chuang ,  Ying-Hsueh Chang Chien ,  Chi-Ming Yang ,  Chi-Wen Liu ,  Chin-Hsiang Lin

    IPC: H01L21/306 ,  B05B1/00

    CPC classification number: H01L21/32134 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708

    Abstract: A method of semiconductor fabrication including providing a semiconductor wafer and dispensing a first chemical spray onto the wafer using a first nozzle and dispensing a second chemical spray using a second nozzle onto the wafer. These dispensing may be performed simultaneously. The method may further include moving the first and second nozzle. The first and second nozzle may provide the first and second chemical spray having at least one different property. For example, different chemical compositions, concentrations, temperatures, angles of dispensing, or flow rate. A chemical dispersion apparatus providing two nozzles which are operable to be separately controlled is also provided.

    Abstract translation: 一种半导体制造方法，包括提供半导体晶片并使用第一喷嘴将第一化学喷雾分配到晶片上，并且使用第二喷嘴将第二化学喷雾分配到晶片上。 这些分配可以同时进行。 该方法还可以包括移动第一和第二喷嘴。 第一和第二喷嘴可以提供具有至少一种不同性质的第一和第二化学喷雾。 例如，不同的化学成分，浓度，温度，分配角度或流速。 还提供了提供可分开控制的两个喷嘴的化学分散装置。

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