Invention Application
- Patent Title: Electrode Treatments for Enhanced DRAM Performance
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Application No.: US13677536Application Date: 2012-11-15
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Publication No.: US20130069202A1Publication Date: 2013-03-21
- Inventor: Xiangxin Rui , Takashi Arao , Hanhong Chen , Naonori Fujiwara , Edward Haywood , Toshiyuki Hirota , Takakazu Kiyomura , Kenichi Koyanagi , Sandra G. Malhotra
- Applicant: INTERMOLECULAR, INC. , ELPIDA MEMORY, INC
- Applicant Address: JP Tokyo US CA San Jose
- Assignee: ELPIDA MEMORY, INC,INTERMOLECULAR, INC.
- Current Assignee: ELPIDA MEMORY, INC,INTERMOLECULAR, INC.
- Current Assignee Address: JP Tokyo US CA San Jose
- Main IPC: H01L49/02
- IPC: H01L49/02
Abstract:
A method for fabricating a dynamic random access memory capacitor is disclosed. The method may comprise depositing a first titanium nitride (TiN) electrode; creating a first layer of titanium dioxide (TiO2) on the first TiN electrode; depositing a dielectric material on the first layer of titanium dioxide; and depositing a second TiN electrode on the dielectric material.
Information query
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