发明申请
US20130071967A1 Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell
审中-公开
制造用作N-P二极管或太阳能电池的电极的镍膜的方法
- 专利标题: Method for Making a Nickel Film for Use as an Electrode of an N-P Diode or Solar Cell
- 专利标题(中): 制造用作N-P二极管或太阳能电池的电极的镍膜的方法
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申请号: US13238122申请日: 2011-09-21
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公开(公告)号: US20130071967A1公开(公告)日: 2013-03-21
- 发明人: Yu-Han Su , Wei-Yang Ma , Tsun-Neng Yang
- 申请人: Yu-Han Su , Wei-Yang Ma , Tsun-Neng Yang
- 申请人地址: TW TAOYUAN COUNTY
- 专利权人: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- 当前专利权人: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- 当前专利权人地址: TW TAOYUAN COUNTY
- 主分类号: H01L21/283
- IPC分类号: H01L21/283 ; H01L31/18
摘要:
Disclosed is a method for making a nickel film for use as an electrode of an n-p diode or solar cell. A light source is used to irradiate an n-type surface of the n-p diode or solar cell, thus producing electron-hole pairs in the n-p diode or solar cell. For the electric field effect at an n-p interface, electrons drift to and therefore accumulate on the n-type surface. With a plating agent, the diode voltage is added to the chemical potential for electroless plating of nickel on the n-type surface. The nickel film can be used as a buffer layer between a contact electrode and the diode or solar cell. The nickel film reduces the contact resistance to prevent a reduced efficiency of the diode or solar cell that would otherwise be caused by diffusion of the atoms of the electrode in following electroplating.
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