发明申请
- 专利标题: SEMICONDUCTOR PROCESS
- 专利标题(中): 半导体工艺
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申请号: US13237975申请日: 2011-09-21
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公开(公告)号: US20130071992A1公开(公告)日: 2013-03-21
- 发明人: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Kuo-Hui Su , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址: TW Taoyuan
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW Taoyuan
- 主分类号: H01L21/762
- IPC分类号: H01L21/762
摘要:
A semiconductor process is provided. An insulating layer is formed on a semiconductor substrate. A portion of the insulating layer is removed, so as to form a plurality of isolation structures and a mesh opening disposed between the isolation structures and exposing the semiconductor substrate. By performing a selective growth process, a semiconductor layer is formed from a surface of the semiconductor substrate exposed by the mesh opening, so that the isolation structures are disposed in the semiconductor layer.