发明申请
- 专利标题： METHODS FOR FORMING SEMICONDUCTOR DEVICES
- 专利标题（中）： 形成半导体器件的方法
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申请号： US13235194申请日： 2011-09-16
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公开(公告)号： US20130072019A1公开(公告)日： 2013-03-21
- 发明人: Errol T. Ryan
- 申请人： Errol T. Ryan
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/28
摘要：
Embodiments of methods for forming a semiconductor device are provided. The method includes forming a metal layer overlying a dielectric material. A thickness of the metal layer is reduced including oxidizing an exposed outer portion of the metal layer to form a metal oxide portion overlying a remaining portion of the metal layer and removing the metal oxide portion.
公开/授权文献
- US08946082B2 Methods for forming semiconductor devices 公开/授权日：2015-02-03
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