Invention Application
US20130075366A1 SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING
有权
使用气体离子束处理的表面轮廓调整
- Patent Title: SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING
- Patent Title (中): 使用气体离子束处理的表面轮廓调整
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Application No.: US13678972Application Date: 2012-11-16
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Publication No.: US20130075366A1Publication Date: 2013-03-28
- Inventor: John J. Hautala
- Applicant: TEL EPION INC.
- Applicant Address: US MA Billerica
- Assignee: TEL EPION INC.
- Current Assignee: TEL EPION INC.
- Current Assignee Address: US MA Billerica
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.
Public/Granted literature
- US08691103B2 Surface profile adjustment using gas cluster ion beam processing Public/Granted day:2014-04-08
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