公开(公告)号：US08709944B2

公开(公告)日：2014-04-29

申请号：US13888981

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

公开(公告)号：US08691103B2

公开(公告)日：2014-04-08

申请号：US13678972

申请日：2012-11-16

Applicant: TEL Epion Inc.

Inventor： John J. Hautala

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract translation: 描述了一种处理工件的方法。 该方法包括从与工件表面轮廓有关的计量数据中计算校正数据，使用气体簇离子束（GCIB）根据校正数据调整表面轮廓，并且通过执行GCIB之后的蚀刻工艺来进一步调节表面轮廓 调整。

公开(公告)号：US20130230984A1

公开(公告)日：2013-09-05

申请号：US13888981

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/285

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20130224950A1

公开(公告)日：2013-08-29

申请号：US13888924

申请日：2013-05-07

Applicant: TEL EPION INC.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/3205

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

公开(公告)号：US08703607B2

公开(公告)日：2014-04-22

申请号：US13888924

申请日：2013-05-07

Applicant: TEL Epion Inc.

Inventor： Noel Russell ,  John J. Hautala ,  John Gumpher

IPC: H01L21/20

CPC classification number: H01L21/28506 ,  C23C14/02 ,  C23C14/024 ,  C23C14/16 ,  C23C14/5833 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/0812 ,  H01J2237/3165 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/3205

Abstract: A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

Abstract translation: 对半导体装置的制造方法进行说明。 该方法包括在形成硅化物区域期间对含硅衬底的至少一部分进行气体簇离子束（GCIB）的预处理和/或后处理。

公开(公告)号：US20130075366A1

公开(公告)日：2013-03-28

申请号：US13678972

申请日：2012-11-16

Applicant: TEL EPION INC.

Inventor： John J. Hautala

IPC: B44C1/22

CPC classification number: B44C1/227 ,  H01J2237/0812 ,  H01L21/02019

Abstract: A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.

Abstract translation: 描述了一种处理工件的方法。 该方法包括从与工件表面轮廓有关的计量数据中计算校正数据，使用气体簇离子束（GCIB）根据校正数据调整表面轮廓，并且通过执行GCIB之后的蚀刻工艺来进一步调节表面轮廓 调整。