发明申请
US20130075366A1 SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING
有权
使用气体离子束处理的表面轮廓调整
- 专利标题： SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING
- 专利标题（中）： 使用气体离子束处理的表面轮廓调整
-
申请号： US13678972申请日： 2012-11-16
-
公开(公告)号： US20130075366A1公开(公告)日： 2013-03-28
- 发明人: John J. Hautala
- 申请人： TEL EPION INC.
- 申请人地址： US MA Billerica
- 专利权人： TEL EPION INC.
- 当前专利权人： TEL EPION INC.
- 当前专利权人地址： US MA Billerica
- 主分类号： B44C1/22
- IPC分类号： B44C1/22
摘要：
A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment.