Invention Application
US20130075720A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME
有权
氧化物半导体，包括其的薄膜晶体管，以及包括其的薄膜晶体管阵列
- Patent Title: OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME
- Patent Title (中): 氧化物半导体，包括其的薄膜晶体管，以及包括其的薄膜晶体管阵列
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Application No.: US13554393Application Date: 2012-07-20
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Publication No.: US20130075720A1Publication Date: 2013-03-28
- Inventor: Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
- Applicant: Byung Du AHN , Je Hun LEE , Sei-Yong PARK , Jun Hyun PARK , Gun Hee KIM , Ji Hun LIM , Jae Woo PARK , Jin Seong PARK , Toshihiro KUGIMIYA , Aya MIKI , Shinya MORITA , Tomoya KISHI , Hiroaki TAO
- Applicant Address: KR Cheonan-si JP Hyogo KR Yongin-City
- Assignee: Jin Seong PARK,Kobe Steel, Ltd.,SAMSUNG DISPLAY CO., LTD.
- Current Assignee: Jin Seong PARK,Kobe Steel, Ltd.,SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Cheonan-si JP Hyogo KR Yongin-City
- Priority: KR10-2011-0095748 20110922
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/38
Abstract:
An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.
Public/Granted literature
Information query
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