发明申请
US20130075805A1 METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
有权
制造非易失性半导体存储器件和非易失性半导体存储器件的方法
- 专利标题： METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
- 专利标题（中）： 制造非易失性半导体存储器件和非易失性半导体存储器件的方法
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申请号： US13419984申请日： 2012-03-14
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公开(公告)号： US20130075805A1公开(公告)日： 2013-03-28
- 发明人: Mitsuru SATO , Megumi ISHIDUKI , Masaru KIDOH , Atsushi KONNO , Yoshihiro AKUTSU , Masaru KITO , Yoshiaki FUKUZUMI , Ryota KATSUMATA
- 申请人： Mitsuru SATO , Megumi ISHIDUKI , Masaru KIDOH , Atsushi KONNO , Yoshihiro AKUTSU , Masaru KITO , Yoshiaki FUKUZUMI , Ryota KATSUMATA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-206893 20110922
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/425
摘要：
According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.
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