发明申请
US20130077388A1 MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT
有权
磁记忆元件，磁记忆体装置，旋转晶体管和集成电路
- 专利标题： MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT
- 专利标题（中）： 磁记忆元件，磁记忆体装置，旋转晶体管和集成电路
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申请号： US13532981申请日： 2012-06-26
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公开(公告)号： US20130077388A1公开(公告)日： 2013-03-28
- 发明人: Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
- 申请人： Tomoaki Inokuchi , Takao Marukame , Mizue Ishikawa , Hideyuki Sugiyama , Masahiko Nakayama , Tatsuya Kishi , Hiroaki Yoda , Yoshiaki Saito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-209986 20110926
- 主分类号： G11C11/16
- IPC分类号： G11C11/16
摘要：
One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.