发明申请
US20130078797A1 METHOD FOR MANUFACTURING A COPPER-DIFFUSION BARRIER LAYER USED IN NANO INTEGRATED CIRCUIT
审中-公开
在纳米集成电路中使用的铜扩散阻挡层的制造方法
- 专利标题： METHOD FOR MANUFACTURING A COPPER-DIFFUSION BARRIER LAYER USED IN NANO INTEGRATED CIRCUIT
- 专利标题（中）： 在纳米集成电路中使用的铜扩散阻挡层的制造方法
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申请号： US13528363申请日： 2012-06-20
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公开(公告)号： US20130078797A1公开(公告)日： 2013-03-28
- 发明人: Qingqing Sun , Lin Chen , Wen Yang , Pengfei Wang , Wei Zhang
- 申请人： Qingqing Sun , Lin Chen , Wen Yang , Pengfei Wang , Wei Zhang
- 申请人地址： CN Shanghai
- 专利权人： Fudan University
- 当前专利权人： Fudan University
- 当前专利权人地址： CN Shanghai
- 优先权： CN201110285348.6 20110923
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method for manufacturing a copper-diffusion barrier layer. In the present invention, a proper reaction precursor has been selected and the atomic layer deposition (ALD) technology has been adopted to develop Co or Ru on a TaN layer to obtain a diffusion barrier layer used in the interconnection for process nodes no more than 32 nm, which overcomes the insufficiency of the PVD deposition Ta/TaN double-layer structure as the copper-diffusion barrier layer in step coverage and conformity, and also effectively solves various serious problems in the Cu/low-k dual damascene process, such as the generation of voids in grooves and through-holes, and electromigration stability.
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