发明申请
US20130081940A1 PHOTOELECTROCHEMICAL CELL INCLUDING Ga(Sbx)N1-x SEMICONDUCTOR ELECTRODE
有权
光电化学电池，包括Ga（Sbx）N1-x半导体电极
- 专利标题： PHOTOELECTROCHEMICAL CELL INCLUDING Ga(Sbx)N1-x SEMICONDUCTOR ELECTRODE
- 专利标题（中）： 光电化学电池，包括Ga（Sbx）N1-x半导体电极
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申请号： US13630875申请日： 2012-09-28
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公开(公告)号： US20130081940A1公开(公告)日： 2013-04-04
- 发明人: Madhu Menon , Michael Sheetz , Mahendra Kumar Sunkara , Chandrashekhar Pendyala , Swathi Sunkara , Jacek B. Jasinski
- 申请人： The University of Kentucky Research Foundation , The University Of Louisville Research Foundation
- 申请人地址： US KY Louisville US KY Lexington
- 专利权人： The University Of Louisville Research Foundation, Inc.,The University of Kentucky Research Foundation
- 当前专利权人： The University Of Louisville Research Foundation, Inc.,The University of Kentucky Research Foundation
- 当前专利权人地址： US KY Louisville US KY Lexington
- 主分类号： H01B1/06
- IPC分类号： H01B1/06 ; H01L21/20 ; C25B9/00 ; H01L29/20
摘要：
The composition of matter comprising Ga(Sbx)N1−x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
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