发明申请
- 专利标题： COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
- 专利标题（中）： 化合物半导体器件及其制造方法
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申请号： US13549655申请日： 2012-07-16
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公开(公告)号： US20130082307A1公开(公告)日： 2013-04-04
- 发明人: Naoya OKAMOTO , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
- 申请人： Naoya OKAMOTO , Kozo Makiyama , Toshihiro Ohki , Yuichi Minoura , Shirou Ozaki , Toyoo Miyajima
- 申请人地址： JP Kawasaki-shi
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki-shi
- 优先权： JP2011-215197 20110929
- 主分类号： H01L29/808
- IPC分类号： H01L29/808 ; H01L21/283
摘要：
A compound semiconductor device includes a compound semiconductor laminated structure, a passivation film formed on the compound semiconductor laminated structure and having a through-hole, and a gate electrode formed on the passivation film so as to plug the through-hole. A grain boundary between different crystalline orientations is formed in the gate electrode, and a starting point of the grain boundary is located apart from the through-hole on a flat surface of the passivation film.
公开/授权文献
- US08791465B2 Compound semiconductor device and manufacturing therefor 公开/授权日：2014-07-29
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