发明申请
US20130082332A1 METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATES SEPARATELY
审中-公开
分别形成N型和P型金属氧化物半导体栅的方法
- 专利标题: METHOD FOR FORMING N-TYPE AND P-TYPE METAL-OXIDE-SEMICONDUCTOR GATES SEPARATELY
- 专利标题(中): 分别形成N型和P型金属氧化物半导体栅的方法
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申请号: US13249643申请日: 2011-09-30
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公开(公告)号: US20130082332A1公开(公告)日: 2013-04-04
- 发明人: Jinping Liu , Min Dai , Ju Youn Kim , Michael P. Chudzik , Jedon Kim , Sungkee Han
- 申请人: Jinping Liu , Min Dai , Ju Youn Kim , Michael P. Chudzik , Jedon Kim , Sungkee Han
- 申请人地址: SG Singapore KR Suwon-si US NY Armonk
- 专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd. ,Samsung Electronics Co., Ltd.,International Business Machines Corporation
- 当前专利权人: GLOBALFOUNDRIES Singapore Pte. Ltd. ,Samsung Electronics Co., Ltd.,International Business Machines Corporation
- 当前专利权人地址: SG Singapore KR Suwon-si US NY Armonk
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L21/28
摘要:
Semiconductor devices with replacement gate electrodes are formed with different materials in the work function layers. Embodiments include forming first and second removable gates on a substrate, forming first and second pairs of spacers on opposite sides of the first and second removable gates, respectively, forming a hardmask layer over the second removable gate, removing the first removable gate, forming a first cavity between the first pair of spacers, forming a first work function material in the first cavity, removing the hardmask layer and the second removable gate, forming a second cavity between the second pair of spacers, and forming a second work function material, different from the first work function material, in the second cavity.