发明申请
US20130082351A1 Method for Fabricating a MIM Capacitor Having a Local Interconnect Metal Electrode and Related Structure
有权
具有局部互连金属电极和相关结构的MIM电容器的制造方法
- 专利标题： Method for Fabricating a MIM Capacitor Having a Local Interconnect Metal Electrode and Related Structure
- 专利标题（中）： 具有局部互连金属电极和相关结构的MIM电容器的制造方法
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申请号： US13248823申请日： 2011-09-29
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公开(公告)号： US20130082351A1公开(公告)日： 2013-04-04
- 发明人: Xiangdong Chen , Henry Kuo-Shun Chen , Wei Xia , Bruce Chih-Chieh Shen
- 申请人： Xiangdong Chen , Henry Kuo-Shun Chen , Wei Xia , Bruce Chih-Chieh Shen
- 申请人地址： US CA IRVINE
- 专利权人： BROADCOM CORPORATION
- 当前专利权人： BROADCOM CORPORATION
- 当前专利权人地址： US CA IRVINE
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
According to one exemplary embodiment, a method for fabricating a metal-insulator-metal (MIM) capacitor in a semiconductor die comprises forming a bottom capacitor electrode over a device layer situated below a first metallization layer of the semiconductor die, and forming a top capacitor electrode over an interlayer barrier dielectric formed over the bottom capacitor electrode. The top capacitor electrode is formed from a local interconnect metal for connecting devices formed in the device layer. In one embodiment, the bottom capacitor electrode is formed from a gate metal. The method may further comprise forming a metal plate in the first metallization layer and over the top capacitor electrode, and connecting the metal plate to the bottom capacitor electrode to provide increased capacitance density.
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