发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICE
- 专利标题(中): 半导体发光器件
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申请号: US13404531申请日: 2012-02-24
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公开(公告)号: US20130087805A1公开(公告)日: 2013-04-11
- 发明人: Shigeya KIMURA , Koichi TACHIBANA , Shinya NUNOUE
- 申请人: Shigeya KIMURA , Koichi TACHIBANA , Shinya NUNOUE
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 优先权: JP2011-224366 20111011
- 主分类号: H01L29/20
- IPC分类号: H01L29/20
摘要:
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.
公开/授权文献
- US08704268B2 Semiconductor light emitting device 公开/授权日:2014-04-22