公开(公告)号：US20130087805A1

公开(公告)日：2013-04-11

申请号：US13404531

申请日：2012-02-24

申请人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

发明人： Shigeya KIMURA ,  Koichi TACHIBANA ,  Shinya NUNOUE

IPC分类号： H01L29/20

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US20130087761A1

公开(公告)日：2013-04-11

申请号：US13405565

申请日：2012-02-27

申请人： Shigeya KIMURA ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Yoshiyuki Harada ,  Hajime Nago ,  Koichi Tachibana ,  Shinya Nunoue

IPC分类号： H01L33/06

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/3408 ,  H01S5/34333

摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containingIII group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

公开(公告)号：US20120153253A1

公开(公告)日：2012-06-21

申请号：US13218827

申请日：2011-08-26

申请人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Koichi Tachibana ,  Hajime Nago ,  Shinya Nunoue

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.

摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。

公开(公告)号：US20120032139A1

公开(公告)日：2012-02-09

申请号：US13032943

申请日：2011-02-23

申请人： Shigeya KIMURA ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Shigeya KIMURA ,  Taisuke Sato ,  Toshihide Ito ,  Takahiro Sato ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/40 ,  H01L33/04

CPC分类号： H01L33/382 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42

摘要： According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.

摘要翻译： 根据一个实施例，半导体发光器件包括：层叠结构体，第一电极; 和第二电极。 层叠结构体包括n型的第一半导体层，p型的第二半导体层和设置在其间的发光部。 第一电极包括第一接触电极部分。 第二电极包括第二接触电极部分和p侧焊盘电极。 第二接触电极部分的薄层电阻低于第一半导体层的薄层电阻。 p侧焊盘电极比第一接触电极部分的外接矩形更靠内侧设置，并且第一接触电极部分比p侧焊盘电极的外接矩形更远地设置。