发明申请
US20130087856A1 Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate
审中-公开
通过金属厚度和氮比的有效工作功能调制最终方法CMOS门
- 专利标题： Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate
- 专利标题（中）： 通过金属厚度和氮比的有效工作功能调制最终方法CMOS门
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申请号： US13253430申请日： 2011-10-05
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公开(公告)号： US20130087856A1公开(公告)日： 2013-04-11
- 发明人: Claude Ortolland , Unoh Kwon , Kota V.R.M. Murali , Edward J. Nowak , Rajan Kumar Pandey
- 申请人： Claude Ortolland , Unoh Kwon , Kota V.R.M. Murali , Edward J. Nowak , Rajan Kumar Pandey
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
A CMOS structure is formed on a semiconductor substrate that includes first and second regions having an nFET and a pFET respectively formed thereon. Each nFET and pFET device is provided with a gate, a source and drain, and a channel formed on the substrate. A high permittivity dielectric layer formed on top of the channel is superimposed to the permittivity dielectric layer. The pFET gate includes a thick metal nitride alloy layer or rich metal nitride alloy or carbon metal nitride layer that provides a controlled WF. Superimposed to the permittivity dielectric layer, the nFET gate is provided with a thin metal nitride alloy layer, enabling to control the WF. A metal deposition is formed on top of the respective nitride layers. The gate last approach characterized by having a high thermal budget smaller than 500° C. used for post metal deposition, following the dopant activation anneal.