Invention Application
- Patent Title: Doping methods for hole injection and transport layers
- Patent Title (中): 空穴注入和输送层的掺杂方法
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Application No.: US13573676Application Date: 2012-10-03
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Publication No.: US20130092887A1Publication Date: 2013-04-18
- Inventor: Venkataramanan Seshadri , Neetu Chopra
- Applicant: Plextronics, Inc.
- Applicant Address: US PA Pittsburgh
- Assignee: Plextronics, Inc.
- Current Assignee: Plextronics, Inc.
- Current Assignee Address: US PA Pittsburgh
- Main IPC: H01B1/12
- IPC: H01B1/12

Abstract:
A method including combining at least one first compound in a neutral form with at least one ionic dopant in a first solvent system to provide a first doped reaction product, isolating the first doped reaction product in solid form, and combining the isolated first doped reaction product with at least one conjugated polymer in neutral form in a second solvent system to form a second doped reaction product including an oxidized form of the conjugated polymer a neutral form of the first compound. Advantages include better stability, ease of use, and lower metal content. Applications include organic electronic devices including OLEDs.
Public/Granted literature
- US09978473B2 Doping methods for hole injection and transport layers Public/Granted day:2018-05-22
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