Invention Application
- Patent Title: Semiconductor Device and Method of Manufacturing the Same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13458809Application Date: 2012-04-27
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Publication No.: US20130093054A1Publication Date: 2013-04-18
- Inventor: Chang Eun LEE
- Applicant: Chang Eun LEE
- Priority: KR10-2011-0105469 20111014
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L21/02
Abstract:
A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first insulation layer on or over a semiconductor substrate, metal patterns on or over the first insulation layer, a thin film resistor pattern disposed on or over the metal patterns, and an anti-reflection layer between the thin film resistor pattern and the metal patterns.
Public/Granted literature
- US08796104B2 Semiconductor device and method of manufacturing the same Public/Granted day:2014-08-05
Information query
IPC分类:
