Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US13708207Application Date: 2012-12-07
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Publication No.: US20130093096A1Publication Date: 2013-04-18
- Inventor: Masayuki FURUMIYA , Yasutaka NAKASHIBA , Akira TANABE
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Kanagawa
- Priority: JP2009-235054 20091009
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
Public/Granted literature
- US08604617B2 Semiconductor device Public/Granted day:2013-12-10
Information query
IPC分类: