发明申请
US20130093321A1 DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS AND METHOD FOR MOUNTING DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS
有权
用于等离子体处理装置的电介质窗口，等离子体处理装置和用于等离子体处理装置的电介质窗口安装方法
- 专利标题： DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING APPARATUS AND METHOD FOR MOUNTING DIELECTRIC WINDOW FOR PLASMA PROCESSING APPARATUS
- 专利标题（中）： 用于等离子体处理装置的电介质窗口，等离子体处理装置和用于等离子体处理装置的电介质窗口安装方法
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申请号： US13638345申请日： 2011-03-24
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公开(公告)号： US20130093321A1公开(公告)日： 2013-04-18
- 发明人: Wataru Yoshikawa , Naoki Matsumoto , Jun Yoshikawa
- 申请人： Wataru Yoshikawa , Naoki Matsumoto , Jun Yoshikawa
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-082169 20100331
- 国际申请： PCT/JP2011/057229 WO 20110324
- 主分类号： H01J23/36
- IPC分类号： H01J23/36 ; H01J9/44
摘要：
In a dielectric window 41 for a plasma processing apparatus, a first dielectric window recess 47 is formed on an outer region of a surface of the dielectric window 41 in a diametrical direction of the dielectric window 41 at a side where plasma is generated, and the first dielectric window recess 47 is extended in a ring shape and has a tapered shape inwardly in a thickness direction of the dielectric window 41. A multiple number of second dielectric window recesses 53a to 53g are formed between the center of the dielectric window 41 and the first dielectric window recess 47, and each of the second dielectric window recesses 53a to 53g is recessed inwardly in the thickness direction of the dielectric window 41 from the surface of the dielectric window 41.