Invention Application
- Patent Title: Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
- Patent Title (中): 孔原子,孔隙前体及其使用方法提供具有低介电常数的多孔有机硅玻璃膜
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Application No.: US13439911Application Date: 2012-04-05
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Publication No.: US20130095255A1Publication Date: 2013-04-18
- Inventor: Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Mary Kathryn Haas
- Applicant: Raymond Nicholas Vrtis , Mark Leonard O'Neill , Jean Louise Vincent , Aaron Scott Lukas , Mary Kathryn Haas
- Applicant Address: US PA Allentown
- Assignee: AIR PRODUCTS AND CHEMICALS, INC.
- Current Assignee: AIR PRODUCTS AND CHEMICALS, INC.
- Current Assignee Address: US PA Allentown
- Main IPC: B05D1/00
- IPC: B05D1/00

Abstract:
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.
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