公开(公告)号：US20130095255A1

公开(公告)日：2013-04-18

申请号：US13439911

申请日：2012-04-05

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

IPC分类号： B05D1/00

CPC分类号： B05D1/62 ,  C03C3/045 ,  C03C11/00 ,  C03C2201/12 ,  C03C2201/21 ,  C03C2201/80 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.

摘要翻译： 一种用于生产多孔有机硅玻璃膜的化学气相沉积方法，包括：向真空室中引入包含至少一种选自有机硅烷和有机硅氧烷的前体的气态试剂和与前体不同的致孔剂，其中 致孔剂是具有非支化结构和不饱和度等于或小于2的C 4至C 14环烃化合物; 向真空室中的气态试剂施加能量以诱导气态试剂在衬底上沉积初步膜的反应，其中预备膜含有致孔剂; 并从初步膜上去除基本上所有不稳定的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。

公开(公告)号：US08951342B2

公开(公告)日：2015-02-10

申请号：US13286634

申请日：2011-11-01

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

IPC分类号： C09D7/12 ,  C23C16/40 ,  H01L21/02 ,  H01L21/316 ,  C23C16/30 ,  C23C16/56 ,  C03C1/00 ,  C23C30/00

CPC分类号： C23C16/401 ,  C03C1/008 ,  C09D7/63 ,  C23C16/30 ,  C23C16/402 ,  C23C16/56 ,  C23C30/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

摘要翻译： 一种用于生产多孔有机硅玻璃膜的化学气相沉积方法，包括：向真空室中引入包含至少一种选自有机硅烷和有机硅氧烷的前体的气态试剂和与前体不同的致孔剂; 向真空室中的气态试剂施加能量以诱导气态试剂在衬底上沉积初步膜的反应，其中预备膜含有致孔剂; 并且从基本上所有的致孔剂的初步膜上除去，以提供具有小于2.6的孔隙和介电常数的多孔膜。

公开(公告)号：US20120282415A1

公开(公告)日：2012-11-08

申请号：US13286634

申请日：2011-11-01

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Mary Kathryn Haas

IPC分类号： C23C16/56 ,  C08K5/5425

CPC分类号： C23C16/401 ,  C03C1/008 ,  C09D7/63 ,  C23C16/30 ,  C23C16/402 ,  C23C16/56 ,  C23C30/00 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the porogen to provide the porous film with pores and a dielectric constant less than 2.6.

摘要翻译： 一种用于生产多孔有机硅玻璃膜的化学气相沉积方法，包括：向真空室中引入包含至少一种选自有机硅烷和有机硅氧烷的前体的气态试剂和与前体不同的致孔剂; 向真空室中的气态试剂施加能量以诱导气态试剂在衬底上沉积初步膜的反应，其中预备膜含有致孔剂; 并且从基本上所有的致孔剂的初步膜上除去，以提供具有小于2.6的孔隙和介电常数的多孔膜。

公开(公告)号：US20110143032A1

公开(公告)日：2011-06-16

申请号：US13031387

申请日：2011-02-21

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C23C16/44 ,  C09D7/12

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens), which can be independent of, or bonded to, the precursors. The porogens are subsequently removed to provide the porous film. Compositions, such as kits, for forming the films include porogens and precursors. Porogenated precursors are also useful for providing the film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜通过化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其可以与前体无关或与之结合。 随后除去致孔剂以提供多孔膜。 用于形成膜的组合物，例如试剂盒包括致孔剂和前体。 致孔前体也可用于提供薄膜。

公开(公告)号：US20090054674A1

公开(公告)日：2009-02-26

申请号：US12262879

申请日：2008-10-31

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, JR.

IPC分类号： C07F7/18 ,  C23C16/56

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07404990B2

公开(公告)日：2008-07-29

申请号：US10295568

申请日：2002-11-14

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B05D3/06 ,  C08F2/34 ,  C08F2/52 ,  C08J7/18 ,  C08J7/16 ,  C23C16/00 ,  C23C16/50 ,  C23C16/56

CPC分类号： C23C16/56 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的某些实施方案中，提供了一种低温方法，以除去多相膜内至少一部分成孔相，从而形成多孔膜。 可以在非氧化性气氛中通过暴露于至少一种能量源（优选紫外光源）除去成孔相。

公开(公告)号：US08293001B2

公开(公告)日：2012-10-23

申请号：US13031387

申请日：2011-02-21

申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

IPC分类号： C09D7/12

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274

摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R1n(OR2)p(O(O)CR4)3−n−pSi—R7—SiR3m(O(O)CR5)q(OR6)3−m−q where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R8 and R7 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, R4 and Rs are independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.

摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜由化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其中前体是式R1n（OR2）p（O（O） ）CR 4）3-n-pSi-R 7 -SiR 3 m（O（O）CR 5）q（OR 6）3-m-q其中R 1和R 3独立地为H或C 1至C 4直链或支链，饱和，单或多不饱和， 环状，部分或完全氟化的烃; R2，R8和R7独立为C1至C6直链或支链，饱和，单或多不饱和，环状，芳族，部分或全部是氟化的烃，R4和R5独立地为H，C1至C6直链或支链，饱和，单或多 不饱和的，环状的，芳族的，部分或完全氟化的烃，n为0至3，m为0至3，q为0至3，p为0至3，条件是n + m> 1，n + p 3和 m + q 3，其中致孔剂选自降冰片二烯，α-萜品烯，柠檬烯，环辛烷和伞花烃。 随后除去致孔剂以提供多孔膜。

公开(公告)号：US07468290B2

公开(公告)日：2008-12-23

申请号：US10624357

申请日：2003-07-21

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L51/40

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07932188B2

公开(公告)日：2011-04-26

申请号：US12262879

申请日：2008-10-31

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Mark Daniel Bitner ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的一个方面，将有机硅酸盐玻璃膜暴露于紫外光源，其中曝光后的膜与其相比具有至少10％或更大的机械性能（即，材料硬度和弹性模量）的改善 沉积膜。

公开(公告)号：US07470454B2

公开(公告)日：2008-12-30

申请号：US10624356

申请日：2003-07-21

申请人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

发明人： Aaron Scott Lukas ,  Mark Leonard O'Neill ,  Mark Daniel Bitner ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B05D5/00 ,  B05D3/06 ,  B05D3/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/42 ,  C23C16/48 ,  C23C16/517 ,  C23C16/56 ,  C08J7/16 ,  H01L21/3105 ,  H01L21/4757

CPC分类号： C23C16/56 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31695

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.

摘要翻译： 当在集成电路中用作层间电介质时，已经确定了低介电材料和包含它们的薄膜以改善性能，以及制造其的方法。 在本发明的某些实施方案中，提供了一种低温方法，以去除复合膜内至少一部分成孔材料，从而形成多孔膜。 成孔材料可以在非氧化性气氛中暴露于至少一种能量源，优选紫外光源下去除。