Invention Application
- Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US13419391Application Date: 2012-03-13
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Publication No.: US20130099198A1Publication Date: 2013-04-25
- Inventor: Akira TANAKA
- Applicant: Akira TANAKA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Priority: JPP2011-233610 20111025
- Main IPC: H01L33/04
- IPC: H01L33/04 ; H01L33/30

Abstract:
According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer.
Information query
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