Invention Application
US20130099198A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
半导体发光元件及其制造方法

  • Patent Title: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
  • Patent Title (中): 半导体发光元件及其制造方法
  • Application No.: US13419391
    Application Date: 2012-03-13
  • Publication No.: US20130099198A1
    Publication Date: 2013-04-25
  • Inventor: Akira TANAKA
  • Applicant: Akira TANAKA
  • Applicant Address: JP Tokyo
  • Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee: Kabushiki Kaisha Toshiba
  • Current Assignee Address: JP Tokyo
  • Priority: JPP2011-233610 20111025
  • Main IPC: H01L33/04
  • IPC: H01L33/04 H01L33/30
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
Abstract:
According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer.
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