TONER, DEVELOPING AGENT, TONER HOUSING UNIT, IMAGE FORMING APPARATUS, AND A METHOD OF FORMING IMAGES

    公开(公告)号:US20220326632A1

    公开(公告)日:2022-10-13

    申请号:US17657471

    申请日:2022-03-31

    Abstract: [Object] An object of the invention is to provide a toner that can both achieve a higher level of low temperature fixability and suppression of the toner scattering.
    [Means of Achieving the Object]
    The disclosure is to provide a toner, including base-particles, and an external-additive, wherein a glass-transition temperature obtained from a DSC-curve at a second-warming of a THF-insoluble component is −50° C. or higher and 10° C. or lower, wherein an average circularity of the toner is 0.975 or more and 0.985 or lower, wherein the toner satisfies the following formula: 1.5≤Bt−0.025−Ct≤3.0, wherein the Bt [m2/g] is a BET-specific-surface area of the toner-particles, and the Ct [%] is a coverage by the external-additive, and, at least a portion of a surface of the external-additive is coated with either an oxide of a metallic element, a hydroxide of the metallic element, or both.

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US08686398B2

    公开(公告)日:2014-04-01

    申请号:US13599852

    申请日:2012-08-30

    Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

    Abstract translation: 半导体发光器件包括第一导电型第一半导体层,第二导电型第二半导体层,半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间,并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层,每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层,使得电流在基本垂直于主表面的方向上流动。

    Communication sheet structure
    5.
    发明授权
    Communication sheet structure 有权
    通讯单结构

    公开(公告)号:US08570240B2

    公开(公告)日:2013-10-29

    申请号:US12996839

    申请日:2008-06-27

    CPC classification number: H04B13/00

    Abstract: A communication sheet structure for transmitting electromagnetic waves, and thereby performing communication, is characterized in that the communication sheet structure includes a planar base material with a relative dielectric constant at a frequency of from 800 MHz to 10 GHz of from 1.0 to 15.0, and one side of the base material includes conductor A existing portion and non-existing portion, and the other side of the base material includes a conductor B existing over 90% or more thereof. The communication sheet structure enables communication in two dimensions, and the communication sheet structure is extremely excellent in communication performances.

    Abstract translation: 用于传送电磁波,从而进行通信的通信片结构的特征在于,通信片结构包括平面基底材料,其相对介电常数在800MHz至10GHz的频率范围为1.0至15.0,一个 基体材料的一侧包括导体A存在部分和不存在部分,并且基材的另一侧包括存在于其中90%以上的导体B. 通信片结构使得能够在二维方面进行通信,并且通信片结构在通信性能方面非常优异。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号:US20130228742A1

    公开(公告)日:2013-09-05

    申请号:US13599852

    申请日:2012-08-30

    Abstract: A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.

    Abstract translation: 半导体发光器件包括第一导电型第一半导体层,第二导电型第二半导体层,半导体发光层以及第一和第二电极。 半导体发光层设置在第一半导体层和第二半导体层之间,并且包括多量子阱结构。 量子阱结构包括交替层叠的阱层和势垒层,每个阱层不小于6nm且不大于10nm。 第一和第二电极电连接到第一和第二半导体层,使得电流在基本垂直于主表面的方向上流动。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20130153857A1

    公开(公告)日:2013-06-20

    申请号:US13598373

    申请日:2012-08-29

    Applicant: Akira TANAKA

    Inventor: Akira TANAKA

    Abstract: In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode, a second electrode and a transparent conductive film. The stacked structure includes a first semiconductor layer with a first conductivity type, a light emitting layer and a second semiconductor layer with a second conductivity type which are formed and stacked directly or indirectly. The stacked structure is taken out light from the light emitting layer side to the second semiconductor layer side. The first electrode is connected to the first semiconductor layer. The second electrode is connected to a first principal surface of the second semiconductor layer which is exposed at the light emitting layer side. The second electrode is arranged in parallel with the first electrode. The transparent conductive film is provided so as to cover a second principal surface of the second semiconductor layer.

    Abstract translation: 在一个实施例中,半导体发光器件包括堆叠结构,第一电极,第二电极和透明导电膜。 堆叠结构包括直接或间接形成和堆叠的具有第一导电类型的第一半导体层,发光层和具有第二导电类型的第二半导体层。 从发光层侧向第二半导体层侧取出层叠结构。 第一电极连接到第一半导体层。 第二电极连接到在发光层侧暴露的第二半导体层的第一主表面。 第二电极与第一电极平行布置。 透明导电膜设置成覆盖第二半导体层的第二主表面。

    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体发光元件及其制造方法

    公开(公告)号:US20130099198A1

    公开(公告)日:2013-04-25

    申请号:US13419391

    申请日:2012-03-13

    Applicant: Akira TANAKA

    Inventor: Akira TANAKA

    CPC classification number: H01L33/38 H01L2924/0002 H01L2933/0016 H01L2924/00

    Abstract: According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer.

    Abstract translation: 根据一个实施例,一种半导体发光元件,包括具有第一导电类型的第一半导体层,具有第二导电类型的第二半导体层,设置在第一半导体层和第二半导体层之间的半导体发光层, 第一电极,具有设置在与半导体发光层相对的第一半导体层上的多个网格形状的网状结构,设置在与半导体发光层相对的第二半导体层上的多个第二电极, 第二电极具有点状,并且与平行于第二半导体层的表面的平面视图中的每个网格形状的中心重叠。

    Light emitting device
    9.
    发明授权
    Light emitting device 失效
    发光装置

    公开(公告)号:US08410473B2

    公开(公告)日:2013-04-02

    申请号:US13291176

    申请日:2011-11-08

    Applicant: Akira Tanaka

    Inventor: Akira Tanaka

    Abstract: A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.

    Abstract translation: 发光器件包括:由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层,多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加,杂质的平均值 从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值,以及 最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

    UNBALANCED-BALANCED CONVERSION CIRCUIT ELEMENT
    10.
    发明申请
    UNBALANCED-BALANCED CONVERSION CIRCUIT ELEMENT 有权
    不平衡平衡转换电路元件

    公开(公告)号:US20130033336A1

    公开(公告)日:2013-02-07

    申请号:US13557246

    申请日:2012-07-25

    Applicant: Akira TANAKA

    Inventor: Akira TANAKA

    CPC classification number: H03H7/42 H03H2001/0085

    Abstract: An unbalanced-balanced conversion circuit element includes an inductor connected in series between an unbalanced terminal and a first balanced terminal. The first balanced terminal side of the inductor is grounded via a capacitor. A capacitor is connected in series between the unbalanced terminal and a second balanced terminal. An inductor is connected between the first balanced terminal side of the inductor and the second balanced terminal side of the capacitor. In a laminate defining the unbalanced-balanced conversion circuit element, the capacitor is spaced far from a mounting surface of the laminate in comparison with other circuit elements.

    Abstract translation: 不平衡平衡转换电路元件包括串联在不平衡端子和第一平衡端子之间的电感器。 电感器的第一个平衡端子侧通过电容器接地。 电容器串联在不平衡端子和第二平衡端子之间。 电感器连接在电感器的第一平衡端子侧和电容器的第二平衡端子侧之间。 在限定不平衡平衡转换电路元件的层压板中,与其它电路元件相比,电容器与层压板的安装表面间隔开。

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