发明申请
- 专利标题： TRANSISTOR WITH SELF-ALIGNED CHANNEL WIDTH
- 专利标题（中）： 具有自对准通道宽度的晶体管
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申请号： US13278038申请日： 2011-10-20
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公开(公告)号： US20130099296A1公开(公告)日： 2013-04-25
- 发明人: Jeong-Ho Lyu , Sohei Manabe
- 申请人： Jeong-Ho Lyu , Sohei Manabe
- 申请人地址： US CA Santa Clara
- 专利权人： OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人： OMNIVISION TECHNOLOGIES, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L31/113
- IPC分类号： H01L31/113 ; H01L21/336
摘要：
A device includes a transistor including a source and a drain disposed in a substrate and a gate disposed above the substrate. The gate includes a first longitudinal member disposed above the source and the drain and running substantially parallel to a channel of the transistor. The first longitudinal member is disposed over a first junction isolation area. The gate also includes a second longitudinal member disposed above the source and the drain and running substantially parallel to the channel of the transistor. The second longitudinal member is disposed over a second junction isolation region. The gate also includes a cross member running substantially perpendicular to the channel of the transistor and connecting the first longitudinal member to the second longitudinal member. The cross member is disposed above and between the source and the drain.
公开/授权文献
- US08716768B2 Transistor with self-aligned channel width 公开/授权日：2014-05-06
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