发明申请
- 专利标题： MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
- 专利标题（中）： 磁记忆元件和磁记忆
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申请号： US13604386申请日： 2012-09-05
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公开(公告)号： US20130099337A1公开(公告)日： 2013-04-25
- 发明人: Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
- 申请人： Masahiko Nakayama , Hisanori Aikawa , Masaru Toko , Hiroaki Yoda , Tatsuya Kishi , Sumio Ikegawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2011-231363 20111021
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.