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    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
    2.
    发明申请
    MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
    磁记忆元件和磁记忆

    公开(公告)号：US20130099337A1

    公开(公告)日：2013-04-25

    申请号：US13604386

    申请日：2012-09-05

    申请人： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

    发明人： Masahiko Nakayama ,  Hisanori Aikawa ,  Masaru Toko ,  Hiroaki Yoda ,  Tatsuya Kishi ,  Sumio Ikegawa

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetic memory element includes a memory layer, a first nonmagnetic layer, a reference layer, a second nonmagnetic layer, and an adjustment layer which are stacked. The adjustment layer is configured to reduce a leakage magnetic field from the reference layer. The adjustment layer is formed by stacking an interface layer provided on the second nonmagnetic layer, and a magnetic layer having magnetic anisotropy perpendicular to a film surface. Saturation magnetization of the interface layer is larger than that of the magnetic layer.

    摘要翻译： 根据一个实施例，磁存储元件包括堆叠的存储器层，第一非磁性层，参考层，第二非磁性层和调整层。 调整层被配置为减少来自参考层的泄漏磁场。 调整层通过层叠设置在第二非磁性层上的界面层和垂直于膜表面的具有磁各向异性的磁性层而形成。 界面层的饱和磁化强度大于磁性层的饱和磁化强度。

    Magnetoresistive effect device and magnetic memory
    3.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    Magnetoresistive element and producing method thereof
    4.
    发明授权
    Magnetoresistive element and producing method thereof 有权
    磁阻元件及其制造方法

    公开(公告)号：US08878321B2

    公开(公告)日：2014-11-04

    申请号：US13618410

    申请日：2012-09-14

    申请人： Hisanori Aikawa ,  Hiroaki Yoda ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Sumio Ikegawa

    发明人： Hisanori Aikawa ,  Hiroaki Yoda ,  Masahiko Nakayama ,  Tatsuya Kishi ,  Sumio Ikegawa

    IPC分类号： H01L29/82 ,  H01L21/8246 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element comprises a first magnetic layer, in which a magnetization direction is variable and is perpendicular to a film surface, a tunnel barrier layer that is formed on the first magnetic layer, and a second magnetic layer that is formed on the tunnel barrier layer, a magnetization direction of the second magnetic layer being variable and being perpendicular to the film surface. The second magnetic layer comprises a body layer that constitutes an origin of perpendicular magnetic anisotropy, and an interface layer that is formed between the body layer and the tunnel barrier layer. The interface layer has a permeability higher than that of the body layer and a planar size larger than that of the body layer.

    摘要翻译： 根据一个实施例，磁阻元件包括其中磁化方向可变并且垂直于膜表面的第一磁性层，形成在第一磁性层上的隧道势垒层和形成的第二磁性层 在隧道势垒层上，第二磁性层的磁化方向是可变的并垂直于膜表面。 第二磁性层包括构成垂直磁各向异性的原点的主体层以及形成在主体层与隧道势垒层之间的界面层。 界面层的透过率比体层高，平面尺寸比体层大。

    Data writing method for magnetoresistive effect element and magnetic memory
    9.
    发明授权
    Data writing method for magnetoresistive effect element and magnetic memory 有权
    磁阻效应元件和磁存储器的数据写入方法

    公开(公告)号：US08120948B2

    公开(公告)日：2012-02-21

    申请号：US12561495

    申请日：2009-09-17

    申请人： Masahiko Nakayama ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    发明人： Masahiko Nakayama ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675

    摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.

    摘要翻译： 一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始 上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层， 第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。

    DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
    10.
    发明申请
    DATA WRITING METHOD FOR MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
    磁阻效应元件和磁记忆的数据写入方法

    公开(公告)号：US20100073998A1

    公开(公告)日：2010-03-25

    申请号：US12561495

    申请日：2009-09-17

    申请人： Masahiko NAKAYAMA ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    发明人： Masahiko NAKAYAMA ,  Hisanori Aikawa ,  Tsuneo Inaba ,  Kenji Tsuchida ,  Sumio Ikegawa ,  Hiroaki Yoda ,  Naoharu Shimomura

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1675

    摘要： A data writing method for a magnetoresistive effect element of an aspect of the present invention including generating a write current in which a falling period from the start of a falling edge to the end of the falling edge is longer than a rising period from the start of a rising edge to the end of the rising edge, and flowing the write current through the magnetoresistive effect element which comprises a first magnetic layer having an invariable magnetizing direction, a second magnetic layer having a variable magnetizing direction, and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer, to change the magnetizing direction of the second magnetic layer.

    摘要翻译： 一种用于本发明一个方面的磁阻效应元件的数据写入方法，包括产生写入电流，其中从下降沿开始到下降沿结束的下降周期长于从开始 上升沿到上升沿结束，并且使写入电流流过磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层和设置在可变磁化方向之间的隧道势垒层， 第一磁性层和第二磁性层，以改变第二磁性层的磁化方向。