发明申请
US20130102123A1 METHOD FOR FABRICATING SINGLE-SIDED BURIED STRAP IN A SEMICONDUCTOR DEVICE
审中-公开
用于在半导体器件中制造单面凸纹的方法
- 专利标题: METHOD FOR FABRICATING SINGLE-SIDED BURIED STRAP IN A SEMICONDUCTOR DEVICE
- 专利标题(中): 用于在半导体器件中制造单面凸纹的方法
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申请号: US13276960申请日: 2011-10-19
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公开(公告)号: US20130102123A1公开(公告)日: 2013-04-25
- 发明人: Tzu-Ching Tsai , Yi-Nan Chen , Hsien-Wen Liu
- 申请人: Tzu-Ching Tsai , Yi-Nan Chen , Hsien-Wen Liu
- 申请人地址: TW TAOYUAN
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW TAOYUAN
- 主分类号: H01L21/02
- IPC分类号: H01L21/02
摘要:
A method for manufacturing a buried-strap includes: forming a trench capacitor structure in a semiconductor substrate, wherein the trench capacitor structure has a doped polysilicon layer and an isolation collar covered by the doped polysilicon layer, and a top surface of the doped polysilicon layer is lower than a top surface of the semiconductor substrate such that a first recess is formed; sequentially forming a first resist layer, a second resist layer and a third resist layer over the semiconductor substrate; sequentially patterning the third resist layer, the second resist layer and the first resist layer, forming a patterned tri-layer resist layer over the semiconductor substrate; partially removing a portion of the doped polysilicon layer exposed by the patterned tri-layer resist layer to form a second recess; removing the patterned tri-layer resist layer; and forming an insulating layer in the second recess and a portion of the first recess.