发明申请
- 专利标题： Methods of Forming Conductive Structures in Dielectric Layers on an Integrated Circuit Device
- 专利标题（中）： 在集成电路器件上的介电层中形成导电结构的方法
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申请号： US13281105申请日： 2011-10-25
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公开(公告)号： US20130102147A1公开(公告)日： 2013-04-25
- 发明人: Torsten Huisinga , Jens Heinrich , Ronny Pfuetzner
- 申请人： Torsten Huisinga , Jens Heinrich , Ronny Pfuetzner
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
One method disclosed herein includes the steps of forming a ULK material layer, forming a hard mask layer above the ULK material layer, forming a patterned photoresist layer above the hard mask layer, performing at least one etching process to define an opening in at least the ULK material layer for a conductive structure to be positioned in at least the ULK material layer, forming a fill material such that it overfills the opening, performing a process operation to remove the patterned photoresist layer and to remove the fill material positioned outside of the opening, removing the fill material from within the opening and, after removing the fill material from within the opening, forming a conductive structure in the opening.