发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13283603申请日： 2011-10-28
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公开(公告)号： US20130105912A1公开(公告)日： 2013-05-02
- 发明人: Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
- 申请人： Chun-Wei Hsu , Po-Cheng Huang , Ren-Peng Huang , Jie-Ning Yang , Chia-Lin Hsu , Teng-Chun Tsai , Chih-Hsun Lin , Chang-Hung Kung , Yen-Ming Chen , Yu-Ting Li
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/8234
摘要：
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a transistor region and a resistor region; forming a shallow trench isolation (STI) on the substrate of the resistor region; forming a tank in the STI of the resistor region; and forming a resistor in the tank and on the surface of the STI adjacent to two sides of the tank.
公开/授权文献
- US08779526B2 Semiconductor device 公开/授权日：2014-07-15
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