Invention Application
- Patent Title: METHOD AND SYSTEM FOR MODIFYING DOPED REGION DESIGN LAYOUT DURING MASK PREPARATION TO TUNE DEVICE PERFORMANCE
- Patent Title (中): 方法和系统在掩模制备过程中修改设计区域设计布局设备性能
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Application No.: US13286410Application Date: 2011-11-01
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Publication No.: US20130111419A1Publication Date: 2013-05-02
- Inventor: Mei-Hsuan Lin , Ling-Sung Wang , Chih-Hsun Lin , Chih-Kang Chao
- Applicant: Mei-Hsuan Lin , Ling-Sung Wang , Chih-Hsun Lin , Chih-Kang Chao
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
The present disclosure provides a method and system for modifying a doped region design layout during mask preparation to tune device performance. An exemplary method includes receiving an integrated circuit design layout designed to define an integrated circuit, wherein the integrated circuit design layout includes a doped feature layout; identifying an area of the integrated circuit for device performance modification, and modifying a portion of the doped feature layout that corresponds with the identified area of the integrated circuit during a mask preparation process, thereby providing a modified doped feature layout.
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