发明申请
- 专利标题： 3D Capacitor and Method of Manufacturing Same
- 专利标题（中）： 3D电容器及其制造方法相同
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申请号： US13289038申请日： 2011-11-04
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公开(公告)号： US20130113072A1公开(公告)日： 2013-05-09
- 发明人: Chi-Wen Liu , Chao-Hsiung Wang
- 申请人： Chi-Wen Liu , Chao-Hsiung Wang
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
A 3D capacitor and method for fabricating a 3D capacitor is disclosed. An exemplary 3D capacitor includes a substrate including a fin structure, the fin structure including a plurality of fins. The 3D capacitor further includes an insulation material disposed on the substrate and between each of the plurality of fins. The 3D capacitor further includes a dielectric layer disposed on each of the plurality of fins. The 3D capacitor further includes a first electrode disposed on a first portion of the fin structure. The first electrode being in direct contact with a surface of the fin structure. The 3D capacitor further includes a second electrode disposed on a second portion of the fin structure. The second electrode being disposed directly on the dielectric layer and the first and second portions of the fin structure being different.
公开/授权文献
- US09893163B2 3D capacitor and method of manufacturing same 公开/授权日：2018-02-13
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