利索-全球专利检索

  1. 登录
  2. 注册
发明申请
US20130113093A9 Semiconductor Device and Method of Forming a Metallurgical Interconnection Between a Chip and a Substrate in a Flip Chip Package 有权
半导体器件和在倒装芯片封装中形成芯片和衬底之间的冶金互连的方法

Semiconductor Device and Method of Forming a Metallurgical Interconnection Between a Chip and a Substrate in a Flip Chip Package
摘要：
A method for forming metallurgical interconnections and polymer adhesion of a flip chip to a substrate includes providing a chip having a set of bumps formed on a bump side thereof and a substrate having a set of interconnect points on a metallization thereon, providing a measured quantity of a polymer adhesive in a middle region of the chip on the bump side, aligning the chip with the substrate so that the set of bumps aligns with the set of interconnect points, pressing the chip and the substrate toward one another so that a portion of the polymer adhesive contacts the substrate and the bumps contact the interconnect points, and heating the bumps to a temperature sufficiently high to form a metallurgical connection between the bumps and the interconnect points.
摘要（中）：

用于形成金属互连和倒装芯片与衬底的聚合物粘附的方法包括提供具有在其凸起侧上形成的一组凸块的芯片和在其上的金属化层上具有一组互连点的衬底，提供测量量 在突起侧的芯片的中间区域中的聚合物粘合剂，使芯片与衬底对准，使得该组凸块与该组互连点对准，将芯片和衬底朝向彼此挤压，使得一部分 聚合物粘合剂接触基板，并且凸点接触互连点，并且将凸块加热到足够高的温度以在凸块和互连点之间形成冶金连接。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0