Invention Application
- Patent Title: Micro-Plasma Field Effect Transistors
- Patent Title (中): 微等离子场效应晶体管
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Application No.: US13586717Application Date: 2012-08-15
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Publication No.: US20130113370A1Publication Date: 2013-05-09
- Inventor: Massood Tabib-Azar
- Applicant: Massood Tabib-Azar
- Applicant Address: US UT Salt Lake City
- Assignee: University of Utah Research Foundation
- Current Assignee: University of Utah Research Foundation
- Current Assignee Address: US UT Salt Lake City
- Main IPC: H01J17/04
- IPC: H01J17/04

Abstract:
In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, a plasma generation circuit interfaced with the plasma gas enclosure, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having plasma generating electrodes, a second layer having a cavity formed therein, and a third layer having a circuit formed therein. The circuit includes a micro-plasma circuit (MPC) that includes one or more micro-plasma devices (MPDs). A metallic layer covers the MPC except at locations of the MPDs. The first layer is bonded to the second layer and the second layer is bonded to the third layer, thereby forming an enclosure that contains at least one plasma gas.
Public/Granted literature
- US08643275B2 Micro-plasma field effect transistors Public/Granted day:2014-02-04
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