Invention Application
- Patent Title: PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL
- Patent Title (中): 加工室综合压力控制
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Application No.: US13606689Application Date: 2012-09-07
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Publication No.: US20130115110A1Publication Date: 2013-05-09
- Inventor: Merritt Funk , Lee Chen
- Applicant: Merritt Funk , Lee Chen
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Main IPC: F04B49/06
- IPC: F04B49/06 ; H01L21/203 ; H01L21/306
Abstract:
An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.
Public/Granted literature
- US09151286B2 Processing chamber integrated pressure control Public/Granted day:2015-10-06
Information query
