发明申请
- 专利标题： PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL
- 专利标题（中）： 加工室综合压力控制
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申请号： US13606689申请日： 2012-09-07
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公开(公告)号： US20130115110A1公开(公告)日： 2013-05-09
- 发明人: Merritt Funk , Lee Chen
- 申请人： Merritt Funk , Lee Chen
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： F04B49/06
- IPC分类号： F04B49/06 ; H01L21/203 ; H01L21/306
摘要：
An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.
公开/授权文献
- US09151286B2 Processing chamber integrated pressure control 公开/授权日：2015-10-06
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