Invention Application
- Patent Title: METHOD FOR MANUFACTURING INTEGRATED CIRCUIT STRUCTURE WITH MAGNETORESISTANCE COMPONENT
- Patent Title (中): 用磁阻组件制造集成电路结构的方法
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Application No.: US13427875Application Date: 2012-03-22
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Publication No.: US20130115719A1Publication Date: 2013-05-09
- Inventor: FU-TAI LIOU , Chien-Min Lee , Chih-Chien Liang , Nai-Chung Fu
- Applicant: FU-TAI LIOU , Chien-Min Lee , Chih-Chien Liang , Nai-Chung Fu
- Applicant Address: TW Jhubei City
- Assignee: Voltafield Technology Corporation
- Current Assignee: Voltafield Technology Corporation
- Current Assignee Address: TW Jhubei City
- Priority: TW100140601 20111107
- Main IPC: H01L21/321
- IPC: H01L21/321

Abstract:
A method or manufacturing an integrated circuit structure with a magnetoresistance component is provided. A substrate is provided. A circuit structure layer including a metal pad is formed on the substrate. A dielectric layer is formed on the circuit structure. A metal damascene structure is formed in the dielectric layer. An opening is formed in the dielectric layer so as to form a step-drop. A magnetoresistance material layer is formed on the dielectric layer after forming the metal damascene structure and the opening A photolithography process is applied to pattern the magnetoresistance material layer to form a magnetoresistance component electrically connected to the metal damascene structure.
Public/Granted literature
- US08871529B2 Method for manufacturing integrated circuit structure with magnetoresistance component Public/Granted day:2014-10-28
Information query
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