发明申请
US20130119406A1 SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM
审中-公开
硅碳化硅基板，半导体器件及其制造方法
- 专利标题： SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THEM
- 专利标题（中）： 硅碳化硅基板，半导体器件及其制造方法
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申请号： US13613860申请日： 2012-09-13
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公开(公告)号： US20130119406A1公开(公告)日： 2013-05-16
- 发明人: Hiroshi NOTSU , Shin Harada , Keiji Ishibashi , Tsutomu Hori , Yu Saitoh
- 申请人： Hiroshi NOTSU , Shin Harada , Keiji Ishibashi , Tsutomu Hori , Yu Saitoh
- 申请人地址： JP Osaka-shi
- 专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2011-248312 20111114
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L21/20
摘要：
A silicon carbide substrate includes a base layer made of silicon carbide, silicon carbide layers made of single-crystal silicon carbide and arranged side by side on the base layer when viewed in plan view, and a filling portion made of silicon carbide and filling a gap formed between the adjacent silicon carbide layers. The filling portion has a surface roughness of not more than 50 μm in RMS value.
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