Invention Application
US20130119480A1 INTEGRATED CIRCUIT RESISTOR 有权
集成电路电阻

INTEGRATED CIRCUIT RESISTOR
Abstract:
A semiconductor device includes a substrate including an isolation region, and a resistor disposed over the isolation region, wherein the resistor includes an implant with an inverse box-like dopant profile that minimizes resistance variation from subsequent planarization variation. A contact is disposed over the resistor. A method of fabricating such a semiconductor device is also provided.
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