发明申请
US20130119525A1 Power Semiconductor Unit, Power Module, Power Semiconductor Unit Manufacturing Method, and Power Module Manufacturing Method
有权
功率半导体单元,功率模块,功率半导体单元制造方法和功率模块制造方法
- 专利标题: Power Semiconductor Unit, Power Module, Power Semiconductor Unit Manufacturing Method, and Power Module Manufacturing Method
- 专利标题(中): 功率半导体单元,功率模块,功率半导体单元制造方法和功率模块制造方法
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申请号: US13811722申请日: 2011-07-25
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公开(公告)号: US20130119525A1公开(公告)日: 2013-05-16
- 发明人: Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
- 申请人: Nobutake Tsuyuno , Hiroshi Hozoji , Toshiaki Ishii , Tokihito Suwa , Kinya Nakatsu , Takeshi Tokuyama , Junpei Kusukawa
- 申请人地址: JP Hitachinaka-shi, Ibaraki
- 专利权人: Hitachi Automotive Systems, Ltd.
- 当前专利权人: Hitachi Automotive Systems, Ltd.
- 当前专利权人地址: JP Hitachinaka-shi, Ibaraki
- 优先权: JP2010-166705 20100726
- 国际申请: PCT/JP2011/066854 WO 20110725
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L21/56
摘要:
Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.
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