公开(公告)号：US08723306B2

公开(公告)日：2014-05-13

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。

公开(公告)号：US20130119525A1

公开(公告)日：2013-05-16

申请号：US13811722

申请日：2011-07-25

申请人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

发明人： Nobutake Tsuyuno ,  Hiroshi Hozoji ,  Toshiaki Ishii ,  Tokihito Suwa ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Junpei Kusukawa

IPC分类号： H01L23/495 ,  H01L21/56

CPC分类号： H01L23/49568 ,  B60L1/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/123 ,  B60L11/14 ,  B60L15/007 ,  B60L2210/40 ,  B60L2220/14 ,  B60L2240/12 ,  B60L2240/36 ,  B60L2240/525 ,  H01L21/56 ,  H01L21/565 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1203 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15151 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/30107 ,  H02M7/003 ,  H05K7/20927 ,  Y02T10/6217 ,  Y02T10/645 ,  Y02T10/7077 ,  Y02T10/7241 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Heat radiation surfaces 7b and 8b of electrode lead frames 7 and 8 make thermal contact with heat radiation members 301 via insulation sheets 10 to dissipate heat from a power semiconductor element 5 to the heat radiation members (thick portions 301). Each of exposed areas of the heat radiation surfaces 7b and 8b and a surface 13b of a mold material (sealing material 13) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surface 13b adjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surface 7a or 13a so configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

摘要翻译： 电极引线框架7和8的散热表面7b和8b通过绝缘片10与热辐射部件301热接触，以将热量从功率半导体元件5散发到散热部件（厚部分301）。 辐射表面7b和8b的每个暴露区域和与暴露区域相邻的模具材料（密封材料13）的表面13b产生不均匀的步骤，露出区域和表面13b中的任一个与暴露的 区域项目。 在凹凸台面的凸面与凹面之间形成的台阶侧表面具有倾斜面7a，13a，该倾斜面7a，13a可以由倾斜面和凸面以及倾斜面和凹面形成钝角 为每一个。

公开(公告)号：US09326425B2

公开(公告)日：2016-04-26

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H05K7/02 ,  H05K7/20 ,  H01L23/433 ,  H01L25/16 ,  H02M7/00 ,  H01L23/473 ,  H01L25/18 ,  H01L23/36 ,  H01L25/11 ,  H01L23/367

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×∈r, where a relative permittivity of the insulating member is ∈r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 散发功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×∈r的关系，其中绝缘构件的相对介电常数为∈r，a 伴随功率半导体器件的ON / OFF开关操作的导体板和散热板之间产生的浪涌电压为Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US20130279230A1

公开(公告)日：2013-10-24

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H02M7/00 ,  H05K7/20

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 消耗功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×ε的关系，其中绝缘部件的相对介电常数为Er，浪涌电压 在导体板和散热板之间产生的功率半导体器件的ON / OFF开关操作是Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US08952525B2

公开(公告)日：2015-02-10

申请号：US13983291

申请日：2011-03-04

申请人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

发明人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

IPC分类号： H01L23/367 ,  H01L21/52 ,  H01L23/36 ,  H01L23/42 ,  H01L23/495 ,  H01L23/433 ,  H01L23/31 ,  H01L23/00 ,  H01L23/373

CPC分类号： H01L23/3675 ,  H01L21/52 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/42 ,  H01L23/433 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

摘要翻译： 半导体模块包括壳体，该壳体包括由框架部分形成的容纳空间以及设置成彼此面对的壁对部分。 壁部包括散热部和在框架部分处支撑散热部的支撑壁，壁部包括散热部和支撑壁，该支撑壁在框架部分处支撑散热部 。 设置在壁部的散热部分别设置成面对多个半导体器件块。 多个单独的散热部被支撑壁包围，支撑壁变形为通过壳体内部的分离的散热部从框架部分凹陷，使得多个绝缘片紧密接合到多个 引线框架和多个散热部分。

公开(公告)号：US20140197532A1

公开(公告)日：2014-07-17

申请号：US13983291

申请日：2011-03-04

申请人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

发明人： Eiichi Ide ,  Takeshi Tokuyama ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Tokihito Suwa ,  Yuujiro Kaneko

IPC分类号： H01L23/367 ,  H01L21/52

CPC分类号： H01L23/3675 ,  H01L21/52 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/3735 ,  H01L23/42 ,  H01L23/433 ,  H01L23/473 ,  H01L23/49575 ,  H01L24/32 ,  H01L24/33 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/20927 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor module includes a case including a receiving space that is formed by a frame portion and a pair of wall portions disposed to face each other with the frame portion therebetween. The wall portion includes a heat-dissipation portions and a support wall that supports the heat-dissipation portions at the frame portion, and the wall portion includes a heat-dissipation portion and a support wall that supports the heat-dissipation portion at the frame portion. The heat-dissipation portions provided at the wall portion are separately provided by being disposed to face a plurality of semiconductor device blocks respectively. A plurality of separate heat-dissipation portions is surrounded by the support wall, the support wall is deformed to recessed from the frame portion through the separate heat-dissipation portions inside the case such that a plurality of insulating sheets is closely joined to a plurality of lead frames and the plurality of heat-dissipation portions.

摘要翻译： 半导体模块包括壳体，该壳体包括由框架部分形成的容纳空间以及设置成彼此面对的壁对部分。 壁部包括散热部和在框架部分处支撑散热部的支撑壁，壁部包括散热部和支撑壁，该支撑壁在框架部分处支撑散热部 。 设置在壁部的散热部分别设置成面对多个半导体器件块。 多个单独的散热部被支撑壁包围，支撑壁变形为通过壳体内部的分离的散热部从框架部分凹陷，使得多个绝缘片紧密接合到多个 引线框架和多个散热部分。

公开(公告)号：US20130175678A1

公开(公告)日：2013-07-11

申请号：US13818490

申请日：2011-09-05

申请人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

发明人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

IPC分类号： H01L23/34 ,  H01L21/48

CPC分类号： H01L23/34 ,  H01L21/4825 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/3521 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37655 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/1305 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

摘要翻译： 功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板 通过第二焊料材料在功率半导体元件的另一个主表面上接合。 在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。 第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。 第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。 如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠 在第一导体板的基部与第一突起部之间。 功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

公开(公告)号：US08847374B2

公开(公告)日：2014-09-30

申请号：US13818490

申请日：2011-09-05

申请人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

发明人： Eiichi Ide ,  Shinji Hiramitsu ,  Hiroshi Hozoji ,  Nobutake Tsuyuno ,  Kinya Nakatsu ,  Takeshi Tokuyama ,  Akira Matsushita ,  Yusuke Takagi

IPC分类号： H01L23/06 ,  H01L21/48 ,  H01L23/495 ,  H01L23/36 ,  H01L23/34 ,  H01L23/00 ,  H01L23/433 ,  H01L23/492 ,  H01L25/18 ,  H01L25/07

CPC分类号： H01L23/34 ,  H01L21/4825 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/492 ,  H01L23/49524 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L24/84 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/3521 ,  H01L2224/37013 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/37639 ,  H01L2224/37644 ,  H01L2224/37655 ,  H01L2224/40137 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/1306 ,  H01L2924/1305 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/01047 ,  H01L2924/01029

摘要： A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

摘要翻译： 功率半导体模块包括在一个主表面上形成有多个控制电极的功率半导体元件，通过第一焊料材料连接到功率半导体元件的主表面之一的第一导体板和第二导体板 通过第二焊料材料在功率半导体元件的另一个主表面上接合。 在第一导体板上形成有从可应用的第一导体板的基部突出并且包括形成在上侧的第一突起表面的第一突出部。 第二突起部分，包括形成在与功率半导体元件的主表面相对的一个表面上的第二突起表面。 第一焊料材料插入在功率半导体元件和第一导体板之间，同时避免多个控制电极。 如果通过功率半导体元件的一个主面从垂直方向突出，则第二突起部形成为使得第二突起表面的特定侧的突出部与形成的台阶部的突出部重叠 在第一导体板的基部与第一突起部之间。 功率半导体元件上的多个控制电极沿第二突出面的规定侧形成。

公开(公告)号：US20120300522A1

公开(公告)日：2012-11-29

申请号：US13499520

申请日：2010-08-24

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

IPC分类号： H01L23/52 ,  H02M7/48

CPC分类号： H02M7/003 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L25/072 ,  H01L2224/33 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

摘要翻译： 一种半导体器件包括：形成有开口的壳体; 容纳在壳体内的半导体元件; 容纳在壳体内并位于半导体元件的一个表面侧的第一导体板; 第二导体板，容纳在所述壳体内并且位于所述半导体元件的另一表面侧; 电连接到第一导体板的正母线，通过其提供直流电力; 电连接到第二导体板的负母线，通过其提供直流电力; 封闭壳体上的开口的第一树脂构件; 以及第二树脂构件，其密封半导体元件，第一导体板和第二导体板，并且由构成第一树脂构件的材料以外的材料构成。

公开(公告)号：US08653652B2

公开(公告)日：2014-02-18

申请号：US13499520

申请日：2010-08-24

申请人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

发明人： Takeshi Tokuyama ,  Kinya Nakatsu ,  Ryuichi Saito ,  Toshiya Satoh ,  Hideaki Ishikawa ,  Nobutake Tsuyuno ,  Shigeo Amagi

IPC分类号： H01L23/34

CPC分类号： H02M7/003 ,  H01L23/473 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/34 ,  H01L25/072 ,  H01L2224/33 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/8484 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H05K7/1432 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A semiconductor device includes: a case with an opening formed thereat; a semiconductor element housed inside the case; a first conductor plate housed inside the case and positioned at one surface side of the semiconductor element; a second conductor plate housed inside the case and positioned at another surface side of the semiconductor element; a positive bus bar electrically connected to the first conductor plate, through which DC power is supplied; a negative bus bar electrically connected to the second conductor plate, through which DC power is supplied; a first resin member that closes off the opening at the case; and a second resin member that seals the semiconductor element, the first conductor plate and the second conductor plate and is constituted of a material other than a material constituting the first resin member.

摘要翻译： 一种半导体器件包括：形成有开口的壳体; 容纳在壳体内的半导体元件; 容纳在壳体内并位于半导体元件的一个表面侧的第一导体板; 第二导体板，容纳在所述壳体内并且位于所述半导体元件的另一表面侧; 电连接到第一导体板的正母线，通过其提供直流电力; 电连接到第二导体板的负母线，通过其提供直流电力; 封闭壳体上的开口的第一树脂构件; 以及第二树脂构件，其密封半导体元件，第一导体板和第二导体板，并且由构成第一树脂构件的材料以外的材料构成。