发明申请
- 专利标题： SEMICONDUCTOR DEVICES INCLUDING THROUGH SILICON VIA ELECTRODES AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 包括通过电极的硅的半导体器件及其制造方法
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申请号： US13610296申请日： 2012-09-11
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公开(公告)号： US20130127019A1公开(公告)日： 2013-05-23
- 发明人: Dosun LEE , Byung Lyul Park , Gilheyun Choi , Kwangjin Moon , Kunsang Park , Sukchul Bang , Seongmin Son
- 申请人： Dosun LEE , Byung Lyul Park , Gilheyun Choi , Kwangjin Moon , Kunsang Park , Sukchul Bang , Seongmin Son
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2011-0121048 20111118
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.
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