公开(公告)号：US20130127019A1

公开(公告)日：2013-05-23

申请号：US13610296

申请日：2012-09-11

申请人： Dosun LEE ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

发明人： Dosun LEE ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/15311

摘要： A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.

摘要翻译： 半导体器件可以包括半导体衬底，通孔电极和缓冲器。 通孔电极可以通过半导体衬底的厚度延伸穿过半导体衬底的内部的通孔电极，使得半导体衬底的内部部分可以与半导体衬底的外部部分隔离。 缓冲器可以在半导体衬底的内部，其中通孔电极围绕并与缓冲器间隔开。 还讨论了相关方法。

公开(公告)号：US09153559B2

公开(公告)日：2015-10-06

申请号：US13610296

申请日：2012-09-11

申请人： Dosun Lee ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

发明人： Dosun Lee ,  Byung Lyul Park ,  Gilheyun Choi ,  Kwangjin Moon ,  Kunsang Park ,  Sukchul Bang ,  Seongmin Son

IPC分类号： H01L29/40 ,  H01L25/065 ,  H01L23/31 ,  H01L23/48 ,  H01L21/768 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2924/15311

摘要： A semiconductor device may include a semiconductor substrate, a through via electrode, and a buffer. The through via electrode may extend through a thickness of the semiconductor substrate with the through via electrode surrounding an inner portion of the semiconductor substrate so that the inner portion of the semiconductor substrate may thus be isolated from the outer portion of the semiconductor substrate. The buffer may be in the inner portion of the semiconductor substrate with the through via electrode surrounding and spaced apart from the buffer. Related methods are also discussed.

摘要翻译： 半导体器件可以包括半导体衬底，通孔电极和缓冲器。 通孔电极可以通过半导体衬底的厚度延伸穿过半导体衬底的内部的通孔电极，使得半导体衬底的内部部分可以与半导体衬底的外部部分隔离。 缓冲器可以在半导体衬底的内部，其中通孔电极围绕并与缓冲器间隔开。 还讨论了相关方法。

公开(公告)号：US20130052794A1

公开(公告)日：2013-02-28

申请号：US13597352

申请日：2012-08-29

申请人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

发明人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC分类号： H01L21/762

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.

摘要翻译： 提供了具有通过电极的半导体器件及其制造方法。 所述方法包括提供包括彼此面对的顶表面和底表面的基板，形成从基板的顶表面延伸到基板的底表面的孔和间隙，围绕孔的间隙并且比孔更浅，填充 所述孔具有绝缘材料，在所述绝缘材料的所述基板的顶表面上形成金属互连线，凹陷所述基板的底表面以暴露所述绝缘材料，去除所述绝缘材料以经由所述孔暴露所述金属互连线 用导电材料填充孔以形成连接到金属互连线的通孔，再次使基板的底表面露出以露出间隙，并在基底的底表面上形成下绝缘层。

公开(公告)号：US08551860B2

公开(公告)日：2013-10-08

申请号：US13597352

申请日：2012-08-29

申请人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

发明人： Sukchul Bang ,  Kwangjin Moon ,  Byung Lyul Park ,  Dosun Lee ,  Deok-Young Jung ,  Gilheyun Choi

IPC分类号： H01L21/76

CPC分类号： H01L23/5226 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L25/0657 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/06181 ,  H01L2224/11002 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/351 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00

摘要： Provided are semiconductor devices having through electrodes and methods of fabricating the same. The method includes providing a substrate including top and bottom surfaces facing each other, forming a hole and a gap extending from the top surface of the substrate toward the bottom surface of the substrate, the gap surrounding the hole and being shallower than the hole, filling the hole with an insulating material, forming a metal interconnection line on the top surface of the substrate on the insulating material, recessing the bottom surface of the substrate to expose the insulating material, removing the insulating material to expose the metal interconnection line via the hole, filling the hole with a conductive material to form a through electrode connected to the metal interconnection line, recessing the bottom surface of the substrate again to expose the gap, and forming a lower insulating layer on the bottom surface of the substrate.

摘要翻译： 提供了具有通过电极的半导体器件及其制造方法。 所述方法包括提供包括彼此面对的顶表面和底表面的基板，形成从基板的顶表面延伸到基板的底表面的孔和间隙，围绕孔的间隙并且比孔更浅，填充 所述孔具有绝缘材料，在所述绝缘材料的所述基板的顶表面上形成金属互连线，凹陷所述基板的底表面以暴露所述绝缘材料，去除所述绝缘材料以经由所述孔暴露所述金属互连线 用导电材料填充孔以形成连接到金属互连线的通孔，再次使基板的底表面露出以露出间隙，并在基板的底表面上形成下绝缘层。

公开(公告)号：US09847276B2

公开(公告)日：2017-12-19

申请号：US14463645

申请日：2014-08-19

申请人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

发明人： Pil-Kyu Kang ,  Byung Lyul Park ,  SungHee Kang ,  Taeseong Kim ,  Taeyeong Kim ,  Kwangjin Moon ,  Jae-Hwa Park ,  Sukchul Bang ,  Seongmin Son ,  Jin Ho An ,  Ho-Jin Lee ,  Jeonggi Jin

IPC分类号： H01L29/40 ,  H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a top surface and a bottom surface facing each other, an interlayer dielectric layer provided on the top surface of the semiconductor substrate and including an integrated circuit, an inter-metal dielectric layer provided on the interlayer dielectric layer and including at least one metal interconnection electrically connected to the integrated circuit, an upper dielectric layer disposed on the inter-metal dielectric layer, a through-electrode penetrating the inter-metal dielectric layer, the interlayer dielectric layer, and the semiconductor substrate, a via-dielectric layer surrounding the through-electrode and electrically insulating the through-electrode from the semiconductor substrate. The via-dielectric layer includes one or more air-gaps between the upper dielectric layer and the interlayer dielectric layer.

公开(公告)号：US09153522B2

公开(公告)日：2015-10-06

申请号：US14028523

申请日：2013-09-16

申请人： Kwangjin Moon ,  SungHee Kang ,  Taeseong Kim ,  Byung Lyul Park ,  Yeun-Sang Park ,  Sukchul Bang

发明人： Kwangjin Moon ,  SungHee Kang ,  Taeseong Kim ,  Byung Lyul Park ,  Yeun-Sang Park ,  Sukchul Bang

IPC分类号： H01L23/48 ,  H01L23/532 ,  H01L25/065 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/481 ,  H01L21/30625 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.

摘要翻译： 提供半导体器件及其制造方法。 该器件可以包括包括彼此相对的第一表面和第二表面的衬底，设置在可以形成为穿透衬底的通孔中的穿硅通孔（TSV）电极，以及设置在邻近 通过第一表面上的电极。 贯通电极包括填充通孔的一部分的金属层和填充通孔的剩余部分的合金层。 合金层含有至少两种金属元素，其中之一可以与金属层中的金属元素相同，另一种可能与金属层中所含金属元素不同。

公开(公告)号：US09679829B2

公开(公告)日：2017-06-13

申请号：US14809159

申请日：2015-07-24

申请人： Kwangjin Moon ,  SungHee Kang ,  Taeseong Kim ,  Byung Lyul Park ,  Yeun-Sang Park ,  Sukchul Bang

发明人： Kwangjin Moon ,  SungHee Kang ,  Taeseong Kim ,  Byung Lyul Park ,  Yeun-Sang Park ,  Sukchul Bang

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/532 ,  H01L21/306 ,  H01L25/065 ,  H01L23/31 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/481 ,  H01L21/30625 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49827 ,  H01L23/53238 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2224/05552

摘要： Provided are semiconductor devices and methods of fabricating the same. The device may include a substrate including a first surface and a second surface opposing each other, a through-silicon-via (TSV) electrode provided in a via hole that may be formed to penetrate the substrate, and an integrated circuit provided adjacent to the through electrode on the first surface. The through electrode includes a metal layer filling a portion of the via hole and an alloy layer filling a remaining portion of the via hole. The alloy layer contains at least two metallic elements, one of which may be the same as that contained in the metal layer, and the other of which may be different from that contained in the metal layer.

公开(公告)号：US09673133B2

公开(公告)日：2017-06-06

申请号：US14939394

申请日：2015-11-12

申请人： Jae-Hwa Park ,  Kwangjin Moon ,  Byung Lyul Park ,  Sukchul Bang

发明人： Jae-Hwa Park ,  Kwangjin Moon ,  Byung Lyul Park ,  Sukchul Bang

IPC分类号： H01L23/48 ,  H01L23/50 ,  H01L23/528

CPC分类号： H01L23/481 ,  H01L23/50 ,  H01L23/528 ,  H01L2224/13 ,  H01L2924/0002 ,  H01L2924/00

摘要： Semiconductor devices having through-electrodes are provided. The semiconductor devices may include a substrate, a through-electrode penetrating vertically through the substrate, a circuit layer on the substrate and metal lines in the circuit layer. The metal lines may include two first metals on opposing edges of a top surface of the through-electrode and second metals above the top surface of the through-electrode. At least some of the second metals may not vertically overlap the two first metals.

公开(公告)号：US20150287680A1

公开(公告)日：2015-10-08

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/532 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间介电层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。

公开(公告)号：US09570377B2

公开(公告)日：2017-02-14

申请号：US14677649

申请日：2015-04-02

申请人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

发明人： Jeonggi Jin ,  Byung Lyul Park ,  Jisoon Park ,  Sukchul Bang ,  Deokyoung Jung

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L23/481 ,  H01L21/6835 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76883 ,  H01L21/76898 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/056 ,  H01L2224/06181 ,  H01L2224/11 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014

摘要： Semiconductor devices having through electrodes capped with self-aligned protection layers. The semiconductor device comprises a semiconductor substrate including an integrated circuit formed therein, an interlayer dielectric layer on the semiconductor substrate to cover the integrated circuit, an intermetal dielectric layer having at least one metal line that is provided on the interlayer dielectric layer and is electrically connected to integrated circuit, and a through electrode that vertically penetrates the interlayer dielectric layer and the semiconductor substrate. The through electrode includes a top portion that is capped with a first protection layer capable of preventing a constituent of the through electrode from being diffused away from the through electrode.

摘要翻译： 具有通过电极覆盖有自对准保护层的半导体器件。 半导体器件包括：半导体衬底，其包括形成在其中的集成电路;半导体衬底上的覆盖集成电路的层间介质层;具有至少一个金属线的金属间电介质层，该金属线设置在层间电介质层上并电连接 到集成电路，以及垂直穿透层间电介质层和半导体衬底的贯通电极。 贯通电极包括顶部，该顶部被第一保护层盖住，该第一保护层能够防止通孔的构成物从通孔扩散。