发明申请
- 专利标题: SEMICONDUCTOR DEVICE BUILT-IN SUBSTRATE
- 专利标题(中): 半导体器件内置衬底
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申请号: US13638421申请日: 2011-03-03
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公开(公告)号: US20130127037A1公开(公告)日: 2013-05-23
- 发明人: Kentaro Mori , Shintaro Yamamichi , Katsumi Kikuchi , Daisuke Ohshima , Yoshiki Nakashima , Hideya Murai
- 申请人: Kentaro Mori , Shintaro Yamamichi , Katsumi Kikuchi , Daisuke Ohshima , Yoshiki Nakashima , Hideya Murai
- 申请人地址: JP Minato-ku, Tokyo
- 专利权人: NEC CORPORATION
- 当前专利权人: NEC CORPORATION
- 当前专利权人地址: JP Minato-ku, Tokyo
- 优先权: JP2010-081443 20100331
- 国际申请: PCT/JP2011/054881 WO 20110303
- 主分类号: H01L23/34
- IPC分类号: H01L23/34
摘要:
An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device.