发明申请
US20130128663A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE
有权
用于编程非易失性存储器件的非易失性存储器件和方法
- 专利标题: NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING NON-VOLATILE MEMORY DEVICE
- 专利标题(中): 用于编程非易失性存储器件的非易失性存储器件和方法
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申请号: US13599022申请日: 2012-08-30
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公开(公告)号: US20130128663A1公开(公告)日: 2013-05-23
- 发明人: HYUN-SEOK KIM , SUNG-BIN KIM , SUNG-HWAN BAE , JONG-NAM BAEK , SANG-HOON LEE
- 申请人: HYUN-SEOK KIM , SUNG-BIN KIM , SUNG-HWAN BAE , JONG-NAM BAEK , SANG-HOON LEE
- 申请人地址: KR SUWON-SI
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR SUWON-SI
- 优先权: KR10-2011-0121810 20111121
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/04
摘要:
A method for programming a non-volatile memory device includes: providing a non-volatile memory device including data cells capable of storing N-bit data (N is a natural number) and a monitoring cell capable of monitoring whether the N-bit data has been programmed into the data cells; performing a first programming operation for the data cells while inhibiting programming of the monitoring cell; and performing a second programming operation for the monitoring cell while inhibiting programming of the data cells, wherein the second programming operation is performed differently from the first programming.
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