发明申请
- 专利标题： VERTICAL CAPACITORS AND METHODS OF FORMING THE SAME
- 专利标题（中）： 垂直电容器及其形成方法
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申请号： US13618873申请日： 2012-09-14
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公开(公告)号： US20130134554A1公开(公告)日： 2013-05-30
- 发明人: Seong-il KIM , Sang-Heung LEE , Jong-Won LIM , Hyung Sup YOON , Jongmin LEE , Byoung-Gue MIN , Jae Kyoung MUN , Eun Soo NAM
- 申请人： Seong-il KIM , Sang-Heung LEE , Jong-Won LIM , Hyung Sup YOON , Jongmin LEE , Byoung-Gue MIN , Jae Kyoung MUN , Eun Soo NAM
- 申请人地址： KR Daejeon
- 专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- 当前专利权人地址： KR Daejeon
- 优先权： KR10-2011-0125763 20111129
- 主分类号： H01L29/92
- IPC分类号： H01L29/92 ; H01L21/02
摘要：
Provided are vertical capacitors and methods of forming the same. The formation of the vertical capacitor may include forming input and output electrodes on a top surface of a substrate, etching a bottom surface of the substrate to form via electrodes, and then, forming a dielectric layer between the via electrodes. As a result, a vertical capacitor with high capacitance can be provided in a small region of the substrate.
公开/授权文献
- US08853821B2 Vertical capacitors and methods of forming the same 公开/授权日：2014-10-07
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