发明申请
- 专利标题: DUAL POWER SUPPLY MEMORY ARRAY HAVING A CONTROL CIRCUIT THAT DYANMICALLY SELECTS A LOWER OF TWO SUPPLY VOLTAGES FOR BITLINE PRE-CHARGE OPERATIONS AND AN ASSOCIATED METHOD
- 专利标题(中): 具有控制电路的双电源存储器阵列,用于选择用于双向预充电操作的两个电源电压和相关方法
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申请号: US13307245申请日: 2011-11-30
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公开(公告)号: US20130135944A1公开(公告)日: 2013-05-30
- 发明人: George M. Braceras , Kirk D. Peterson , Harold Pilo
- 申请人: George M. Braceras , Kirk D. Peterson , Harold Pilo
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C5/14
- IPC分类号: G11C5/14
摘要:
Disclosed is a memory array in which the lower of two supply voltages from two power supplies is dynamically selected for bitline pre-charge operations. In the memory array, a voltage comparator compares the first supply voltage on a first power supply rail to a second supply voltage on a second power supply rail and outputs a voltage difference signal. If the voltage difference signal has a first value indicating that the first supply voltage is equal to or less than the second supply voltage, than a control circuit ensures that the complementary bitlines connected to a memory cell are pre-charged to the first supply voltage. If the voltage difference signal has a second value indicating that the first supply voltage is greater than the second supply voltage, then the control circuit ensures that the complementary bitlines are pre-charged to the second supply voltage. Also disclosed is an associated method.
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